mosfets silicon n-channel mos ( -mos ) TK4P60D 1. 1. 1. 1. applications applications applications applications ? switching voltage regulators 2. 2. 2. 2. features features features features (1) low drain-source on-resistance: r ds(on) = 1.4 ? (typ.) (2) high forward transfer admittance: |y fs | = 2.5 s (typ.) (3) low leakage current: i dss = 10 a (max) (v ds = 600 v) (4) enhancement mode: v th = 2.4 to 4.4 v (v ds = 10 v, i d = 1 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1: gate (g) 2: drain (d)(heatsink) 3: source (s) dpak 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics drain-source voltage gate-source voltage drain current (dc) drain current (pulsed) power dissipation single-pulse avalanche energy avalanche current reverse drain current (dc) reverse drain current (pulsed) channel temperature storage temperature (t c = 25 ) (note 1) (note 1) (note 2) (note 3) (note 1) (note 1) symbol v dss v gss i d i dp p d e as i ar i dr i drp t ch t stg rating 600 30 4 16 100 158 4 4 16 150 -55 to 150 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. www.freescale.net.cn www.freescale.net.cn 1/8 7 . 3 ' 0 2 6 ) ( 7 v 6 l o l f r q 1 & |